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Дома > Список технологий > Microsemi Power Transistor-1011GN-1200V

Microsemi Power Transistor-1011GN-1200V

Время публикации: 2019-03-04

1011GN-1200V datasheet

Richardson RFPD, Inc. announced today the availability and full design support capabilities for the 1011GN-1200V power transistor from Microsemi Corporation.

The 1011GN-1200V is an internally-matched, common source, class AB, GaN on SiC HEMT capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32 µs, and 2% duty cycle pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance, and it utilizes gold metallization and eutectic attach to provide outstanding reliability and superior ruggedness.

Key features of the 1011GN-1200V

  • Power gain: 20 dB (typ.)
  • Drain efficiency: 75% (typ.)
  • Supply voltage: 50 VDC
  • Package: 55Q03

The 1011GN-1200V is part of Microsemi’s portfolio of GaN power transistors designed and optimized for radar and avionics that enable engineers to achieve the highest performance compact power amplifier designs that meet the need for smaller footprints, reduced weight, and higher power density and efficiency.

Maximum Power Dissipation
Device Dissipation @ 25C 2400W

Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +200 C

About Richardson RFPD

Richardson RFPD, an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production. 

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