Microsemi Power Transistor-1011GN-1200V
Время публикации: 2019-03-04
Richardson RFPD, Inc. announced today the availability and full design support capabilities for the 1011GN-1200V power transistor from Microsemi Corporation.
The 1011GN-1200V is an internally-matched, common source, class AB, GaN on SiC HEMT capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32 µs, and 2% duty cycle pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance, and it utilizes gold metallization and eutectic attach to provide outstanding reliability and superior ruggedness.
Key features of the 1011GN-1200V
- Power gain: 20 dB (typ.)
- Drain efficiency: 75% (typ.)
- Supply voltage: 50 VDC
- Package: 55Q03
The 1011GN-1200V is part of Microsemi’s portfolio of GaN power transistors designed and optimized for radar and avionics that enable engineers to achieve the highest performance compact power amplifier designs that meet the need for smaller footprints, reduced weight, and higher power density and efficiency.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 2400W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +200 C
About Richardson RFPD
Richardson RFPD, an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production.
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