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Samsung Semiconductor, Inc Производитель

In 1974, Samsung's Semiconductor Business was founded in Korea. In 1983, the successful development of the 64Kb DRAM made Samsung's evolution become the leading semiconductor manufacturer. Then in 1984, the Giheung Semiconductor Complex and Samsung’s first memory fabrication facility opened. Samsung has held market leadership positions in Memory since 1993 and in NAND Flash since 2003 through a strategy of aggressive growth. The leading products and technology of Samsung: DRAM with 40nm Process Technology, OneDRAM?, a Fusion Memory Solution, NAND Flash, "Intelligent" DDI (Display Driver IC), 1GB S-SIM Card, Solid State Drive and External Hard Drive. A new "Fusion Era" of multi-functional, hybrid components is expected to profoundly affect the semiconductor industry. With multiple functions on one chip, Fusion technology offered multi-faceted solutions for the semiconductor industry signifies. The continual development of smaller and higher-density components Samsung has been leading the industry in fusion technology with the development its OneNAND?, Flex-OneNAND? and OneDRAM? fusion memory solutions. In 2001, the company signaled a long commitment to logic and analog chip development with the expansion of its System LSI Division and the opening of its SoC Research Lab. In 2004, Samsung's Hard Disk Drive Division was combined with its Semiconductor Business. Samsung predicts that semiconductor technology will spread to a significantly greater degree than previously thought possible: in biotechnology, healthcare, robotics, aviation, solar energy and in many more areas related to research and development of eco-friendly technologies.

Samsung Electro-Mechanics has began as a producer of audio/video parts, which has been the foundation of the company to lead the technological autonomy of the parts industry in Korea. During the '80s, Samsung Electro-Mechanics diversified its business and included materials and computer parts on its business scope, while during the '90s, it placed its focus on the development of next-generation products, including chip components, telecommunications parts, and optic parts.

Since the turn of the century, Samsung Electro-Mechanics has been leveraging its technological excellence in key areas, such as high-frequency wireless materials and power/precision mechanics to further develop its strategic technology and to generate synergic effect in its businesses. With this, Samsung Electro-Mechanics continues to focus on developing its business in boards, chip parts, camera modules, and communication modules with the aim to become the world leader in each of those fields. Samsung Electro-Mechanics will continue to expand its business portfolio through quality enhancement, technological advancement, and development of new products. It also aims to foster next-generation business opportunities to make its next leap as the leader in the electronic parts industry.

Samsung has announced early production on 8Gb (1GB) LPDDR5 modules using 10nm-class* process nodes and with a specific focus on 5G and automotive applications. .

Keep in mind, however, that the voltage targets shown above are for the standard, not for any specific IC. According to Samsung, its memory will use a higher VDD — 1.1v for operation at the 6,400Mbit/s performance level, and 1.05v for a lower 5,500Mbit/s bandwidth. Both of these would be an advance over LPDDR4, but not nearly as dramatic a shift as one might see if you binned your LPDDR5 specifically for low power and minimal performance. Samsung also claims that its performance improvements are the result of internal design improvements. The company writes: “By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.”

Power efficiency has been maximized by configuring the chip to lower its voltage in response to the operating mode of its application processor, and to avoid overwriting cells with ‘0’ values when in active mode. A new “deep sleep” mode is also available, which supposedly cuts power consumption to half of the current idle mode available in LPDDR4X. Overall, Samsung projects that the new LPDDR5 memory should be up to 30 percent more power efficient.

One oddity about all this is that LPDDR5 doesn’t seem to be particularly well-attested in the current public record. Typically by the time a new memory standard is poised for introduction, it’s easy to find no end of discussion concerning the spec. That’s not the case here. In fact, JEDEC doesn’t even appear to have finalized the LPDDR5 spec yet, which makes this a rather significant case of jumping the gun. DDR5 hasn’t even been finalized yet, and we’d expect the DDR mainstream version of the standard to appear before later low-power variants.

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