- Full Name : Samsung Semiconductor, Inc Производитель
- Сайт : www.samsung.com
Samsung Electro-Mechanics has began as a producer of audio/video parts, which has been the foundation of the company to lead the technological autonomy of the parts industry in Korea. During the '80s, Samsung Electro-Mechanics diversified its business and included materials and computer parts on its business scope, while during the '90s, it placed its focus on the development of next-generation products, including chip components, telecommunications parts, and optic parts.
Since the turn of the century, Samsung Electro-Mechanics has been leveraging its technological excellence in key areas, such as high-frequency wireless materials and power/precision mechanics to further develop its strategic technology and to generate synergic effect in its businesses. With this, Samsung Electro-Mechanics continues to focus on developing its business in boards, chip parts, camera modules, and communication modules with the aim to become the world leader in each of those fields. Samsung Electro-Mechanics will continue to expand its business portfolio through quality enhancement, technological advancement, and development of new products. It also aims to foster next-generation business opportunities to make its next leap as the leader in the electronic parts industry.
Samsung has announced early production on 8Gb (1GB) LPDDR5 modules using 10nm-class* process nodes and with a specific focus on 5G and automotive applications. .
Keep in mind, however, that the voltage targets shown above are for the standard, not for any specific IC. According to Samsung, its memory will use a higher VDD — 1.1v for operation at the 6,400Mbit/s performance level, and 1.05v for a lower 5,500Mbit/s bandwidth. Both of these would be an advance over LPDDR4, but not nearly as dramatic a shift as one might see if you binned your LPDDR5 specifically for low power and minimal performance. Samsung also claims that its performance improvements are the result of internal design improvements. The company writes: “By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.”
Power efficiency has been maximized by configuring the chip to lower its voltage in response to the operating mode of its application processor, and to avoid overwriting cells with ‘0’ values when in active mode. A new “deep sleep” mode is also available, which supposedly cuts power consumption to half of the current idle mode available in LPDDR4X. Overall, Samsung projects that the new LPDDR5 memory should be up to 30 percent more power efficient.
One oddity about all this is that LPDDR5 doesn’t seem to be particularly well-attested in the current public record. Typically by the time a new memory standard is poised for introduction, it’s easy to find no end of discussion concerning the spec. That’s not the case here. In fact, JEDEC doesn’t even appear to have finalized the LPDDR5 spec yet, which makes this a rather significant case of jumping the gun. DDR5 hasn’t even been finalized yet, and we’d expect the DDR mainstream version of the standard to appear before later low-power variants.
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Samsung is product portfolio consists of DRAM, FLASH, eMMC, MCP, ARM CPU, display driver IC, CMOS image sensor, etc..
Consumer Electronics / Portable Devices / Instrumentation / Communication / Network / Transportation / Automotive
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S3C72B5 pdf of Samsung
Размер: 292 Kb Время публикации: 2020-03-18
The S3C72B5/C72B7/C72B9 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 (Samsung Arrangeable Microcontrolle). With an u...
KA3S0765R pdf of Samsung
Размер: 329 Kb Время публикации: 2020-03-18
The SPS product family is specially designed for an off line SMPS with minimal external component. The SPS coist of high voltage Power SeeFET and current mode control IC. Included control IC...
Samsung Связанные специальные
DDR4 512Mx8 PC2400 >
LINEAR INTEGRATED CI >
Mobile LPDDR3 16Gb 1 >
16GB e-MMC 400MB/s 2 >
64K X 1 BIT DYNAMIC >
RISC Microprocessor >
DRAM GDDR5 128Mx32 >
4G bit Nand Flash 51 >
1M x 16Bit CMOS >
32-Bit RISC Micr >
Ntework Controller >