MOSFET family suitable for battery pack applications
Время обновления: 2019-12-20 22:34:05
Alpha and Omega Semiconductor Limited release a new dual MOSFET family in the common-drain configuration in both DFN 5x6 and Micro-DFN 3.2x2 packages. These devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection. The products provide ultra-low RSS (source-to-source resistance) of less than 10mOhms at 10V gate drive.
AON6810, AON6812, and AOC4810 provide ideal solutions for enhancing battery pack performance in the latest generation Ultrabooks and tablets, where low conduction loss is a must for optimizing battery life.
The new devices use the latest AlphaMOS technology to accomplish very low RDS(ON) along with 4kV ESD protection to enhance battery pack safety. AON6810 and AON6812 use a bottom-exposed DFN5x6 package for enhanced thermal capability. The AON6812 features a low 8mOhm max total RSS (source-to-source) resistance at 10V drive. Rated with a 30V breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and heat dissipation.
The AON6810 provides an extra level of protection with an internal temperature sense diode that provides first-hand thermal information to the battery control IC. By utilizing the temperature sense pins of AON6810, designers can accurately monitor the MOSFETs' thermal condition in a real time basis to prevent any abnormal overheating.
To meet the demand of ultra-thin battery packs, the AOC4810 takes advantage of AOS's innovative Micro-DFN package, which features an ultra-low profile of only 0.4mm. Unlike conventional CSP (chip scale packaging), the Micro-DFN eliminates the risk of die chipping by encapsulating the silicon to provide full protection to the die as well as providing excellent moisture isolation. When board space is a key concern, AOC4810 provides a great option to further enhance power density. With dimensions of only 3.2mm x 2mm, AOC4810 offers a maximum RSS level of 8.8mOhms to minimize conduction loss and heat dissipation.
The AON6810, AON6812, and AOC4810 are all RoHS and Halogen-Free compliant.
Availability
All devices are immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces for AON6812, AON6810, and AOC4810 are $0.825, $0.78, and $0.525 respectively.
For more information, please visit www.aosmd.com.
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Ratings and Reviews
Связанные специальные
-
AON6324
AOS
DFN5X6 > -
AON6912ALS
AOS
MOSFET N-CH > -
AON6884
AOS
MOSFETS N Channel 40V 34A DFN 5x6 EP2 > -
AON6716
AOS
Trans MOSFET N-CH 30V 85A 8-Pin DFN EP T > -
AON6524
AOS
30V N-Channel AlphaMOS > -
AON6522
AOS
MOSFET N-CH 25V 71A DFN5X6 > -
AON6502
AOS
MOSFET N-CH 30V 49A DFN5X6 > -
AON6450
AOS
TRANS MOSFET N-CH 100V 52A > -
AON6418
AOS
MOSFET N CH 30V 36A SDMOS > -
AON6400
AOS
MOSFET N-CH 30V 85A 5X6DFN EP > -
AON3814
AOS
Common-Drain Dual N-Channel Enhancement > -
AON2803
AOS
MOSFETS P Channel -20V -3.8A DFN 2x2 > -
AON2408
AOS
MOSFET N CH 20V 8A DFN 2x2B > -
AON1606
AOS
MOSFET N-CH 20V 0.7A 3DFN > -
AOI514
AOS
MOSFETS N Channel 30V 54A TO-251A >
Горячие акции
Больше- AOH3106
- AOD496
- AOD486A
- AOD476
- AOD472
- AOD450
- AOD4454
- AOD424
- AOD403
- AOD3N60
- AOD3N40
- AOD2N60
- AOD1N60
- AOD11S60
- AOC2401
- AOB260L
- AO8822
- AO7408
- AO7407
- AO6704
- AO6408
- AO6402AL
- AO5404E
- AO4852
- AO4842
- AO4828
- AO4826
- AO4706
- AO4614B
- AO4600C
- AO4482
- AO4437
- AO4425
- AO4402
- AO4310
- AO3442
- AO3421E
- AO3418
- AO3414
- AO3413L
- AO3409L
- AO3409
- AO3404
- AO3402
- AO3401