Jotrin Electronics
Описание Количество Общий (USD) Операция
Корзина продуктов
Корзина продуктов : 0
Дома > Other > Everything about N-channel hexfet power mosfet-IRF3205

Everything about N-channel hexfet power mosfet-IRF3205

Время обновления: 2023-12-27 14:11:28

Guide: HELLO, friends, with the development of technology, electronic components play an important role in daily life, jotrin electronics will regularly introduce relevant knowledge for the majority of electronic enthusiasts, help you better understand some specific Electronic components.

Today, Jotrin Electronics Engineer, Paul, introduces you to an electronic component that is very popular in the market-IRF3205.

The IRF3205 is an advanced N-Channel HEXFET Power MOSFET from international rectifier, and the irf3205 is available in a to-220ab package.

It is commonly used with Power Switching circuits,its minimum gate threshold voltage is 2V,drain to source breakdown voltage is 55v.

Additionally, it falls under the category of ultra LOW on-resistance devices based on Advanced Process Technology, making it a building block of the electronic applications where fast switching is a major concern.

In this article, you'll learn everything about the transistor, the main features, the benefits and the application. Let's take a look at the details of this widget.Hope you can get information that is valuable to you.

IRF3205 pin

The simple description of IRF3205 

IRF3205 is single N-channel hexfet power mosfet in a TO-220AB package,which is mainly based on Advanced Process Technology and used for fast switching purpose.

The specialty of the MOSFET is that it has very low on resistance of only 8.0mΩ making it suitable for switching circuits like Inverters, motor speed control, DC-DC converter etc. It is also one of the easily available and cheap MOSFET with a low on-resistance.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF3205 has three pins, which are Source, Gate, and Drain. They correspond to different functions. For specific description about IRF3205 pin, please refer to IRF3205.datasheet. IRF3205 Pdf is available for free at the end of the article.

IRF3205 Pinout

IRF3205 Pinout.png

Pin Configuration

Pin No.Pin NameDescription
1GateControls the biasing of the MOSFET
2DrainCurrent flows in through Drain
3SourceCurrent flows out through Source

Benefits of IRF3205:

1.RoHS Compliant
2.Low RDS(on)
3.Industry-leading quality
4.Dynamic dv/dt Rating
5.Fast Switching
6.Fully Avalanche Rated

7.175°C Operating Temperature

In short, the IRF3205 boasts several notable advantages. Firstly, it ensures reliability by being compatible with wave-soldering processes. Secondly, it meets product qualification standards according to JEDEC specifications. The planar cell structure is another highlight, offering an optimal Safe Operating Area (SOA). The silicon component is also specifically optimized for applications with switching frequencies below 100kHz.

Moreover, the entire power package adheres to industry standards. Notably, the IRF3205 is conveniently available through various distribution partners. Lastly, the package is designed to handle high currents, supporting up to 195A, depending on the die size.

You should not miss out the features of the IRF3205

1.N-Channel Power MOSFET
2Continuous Drain Current (ID) is 110A when VGS is 10V
3.Minimum Gate threshold voltage 2V
4.Drain to Source Breakdown Voltage: 55V
5.Low On-Resistance of 8.0mΩ
6.Gate-Source Voltage is (VGS) is ±20V
7.Rise time is 101ns
8.It is commonly used with Power Switching circuits

9.Available in To-220 package

How does IRF3205 work

The gate, source and drain in this MOSFET are analogous to the base, collector, and emitter in the BJT (Bipolar Junction Transistors).The source and drain are made up of n-type material while component body and the substrate is made up of p-type material.

Adding silicon dioxide on the substrate layer gives this device a metal oxide semiconductor construction.

It is a unipolar device where conduction is carried out by the movement of electrons.An insulating layer is inserted in the device that makes gate terminals separated from the entire body. 

The region between drain and source is called N-channel that is controlled by the voltage present at the gate terminal.MOSFET stays ahead of the curve when they are compared to BJT as the former needs no input current to control a large amount of current on remaining two terminals.

IRF3205 internal construction at below

IRF3205 internal construction

How to describe IFR3205 Absolute Maximum Ratings

The followed picture will show you everything about IFR3205 Absolute Maximum Ratings

IFR3205 Absolute Maximum Ratings

Note:It is preferred to get a hold of these ratings before placing the device in the circuit, making sure if it undergoes the same operating conditions and stress ratings as provided by the manufacturer.

IRF3205 Alternatives

IRF3205 Alternatives include IRF1405, IRF1407, IRF3305, IRFZ44N, IRFB3077 and IRFB4110.

There are other N-channel MOSFETS, such as IRF540N, 2N7000, and FDV301N.

Where to use IRF3205?

The IRF3205 finds utility in numerous applications that demand rapid load switching, such as UPS and Battery Backup systems. Additionally, it is suitable for various power supply applications and can effectively control high-current loads when integrated with embedded systems. Moreover, the IRF3205 proves valuable in constructing high-power audio amplifier circuits.

Applications OF IRF3205

Switching Applications
Boost converters
Solar inverters

Speed control


When we need IRF3205, we found that there is no such component, how to deal with it?

Once this happens, we need to understand the relevant properties of the IRF3205 and then find the replacement electronic components, which means that this replacement component has the same functionality and properties as the IRF3205.

Important:IRF1405, IRF1407, IRF3305, IRFZ44N, IRFB3077, IRFB4110 can replace IRF3205.

The related N-channel MOSFETS:IRF540N,2N7000,FDV301N.

Today’s introduction is here, I hope to bring you more valuable information next time.

Thank you for reading this post!


Buy IRF3205 online

Предыдущий: Qualcomm Announced The Launches Of First 5G Millimeter Wave Smartphone Antenna Module

Следующий: Ams a number of innovative sensor technologies appear in MWC


  • What is the function of IRF3205?
  • The IRF3205 represents a high-current N-Channel MOSFET capable of handling currents up to 110A and voltages of 55V. Notably, this MOSFET is distinguished by its remarkably low on-resistance, measuring only 8.0mΩ. This characteristic renders it well-suited for applications in switching circuits, such as inverters, motor speed control, and DC-DC converters.

  • Is IRF3205 a logic-level MOSFET?
  • The IRF3205 is not promoted as a MOSFET designed for logic-level applications.

  • What type of MOSFET is IRF3205?
  • The IRF3205 is a high-current N-Channel MOSFET.

  • How many watts is an IRF3205?
  • 150 Watts.

Ratings and Reviews



мой профиль


Онлайн консультация